本研究的主要目的在探討聚亞醯胺薄膜/含氫類鑽碳膜的界面附著性與鍵結結構。研究主要區分為三部份；
第一部份為含氫類鑽碳膜的熱穩定性研究：以離子束方式，沉積具有高硬度與高絕緣性的1μm厚度含氫類鑽碳膜於矽晶片上，以氮氣爐加熱來評估含氫類鑽碳膜的熱穩定性，退火溫度分別在300℃、350℃及400℃下持溫1小時。以可見光拉曼光譜儀(ID/IG比值)與X光光電子能譜儀(sp2/sp3比值)，比較含氫類鑽碳膜薄膜的熱穩定性與此二個特性指數的關係。實驗結果如下: 拉曼光譜顯示出含氫類鑽碳膜在300℃的退火溫度下開始出現石墨化現象，沉積狀態與退火狀態的含氫類鑽碳膜薄膜，拉曼光譜中的ID/IG比值與X光光電子能譜儀分析的sp2/sp3比值呈現出正向關係。
第二部份為聚亞醯胺薄膜的加熱固化研究: 以旋塗方式，將6μm厚度的聚亞醯胺薄膜旋塗於矽晶片上，以氮氣爐加熱固化而獲得適當的固化率，固化溫度分別在300℃、350℃及400℃下持溫1小時。傅利葉轉換的紅外線光譜則顯示出聚亞醯胺薄膜在300℃時可達到92% 的固化率，較高的固化率將具有較高的超微硬度與彈性模數。
第三部份為聚亞醯胺薄膜/含氫類鑽碳膜的複合鈍化層研究: 將6μm厚度的聚亞醯胺薄膜旋塗於1μm厚度的含氫類鑽碳膜上，以氮氣爐加熱於300℃下持溫1小時以進行固化處理，最後組成穩定的軟質聚亞醯胺薄膜/硬質含氫類鑽碳膜之複合結構。晶片彎曲度量測則顯示出聚亞醯胺薄膜可當作應力緩衝層，其0.09 GPa的拉伸應力可部份釋放含氫類鑽碳膜的1.82 GPa壓縮應力。PI薄膜的電阻值(5.34x1014 Ω-cm)約為DLCH薄膜的2000倍(2.72x1011Ω-cm)，因此聚亞醯胺薄膜可以鈍化DLCH薄膜。簡單膠帶測試則無發生剝離現象於聚亞醯胺薄膜/含氫類鑽碳膜的介面。微硬度測試顯示出聚亞醯胺薄膜/含氫類鑽碳膜直到3N荷重下才發生剝離現象，一個來自epoxy/PI、PI/Cu and SAMs/DLCH界面結構產生的氫鍵鍵結將用來解釋聚亞醯胺薄膜/含氫類鑽碳膜的界面附著機構。此實驗結果顯示出針對二次鈍化的製程，聚亞醯胺(300℃)/含氫類鑽碳膜(300℃)的複合鈍化層結構是可行的低溫製程，相對於聚亞醯胺(400℃)/氮化矽(400℃)高溫的製程。

The main purpose of this study is to investigate the interfacial adhesion and bonding structure of polyimide/hydrogenated diamond-like carbon structure. There are three parts in this study；
The first part involves the deposition of 1μm thick DLCH film on Si wafer surface by using ion beam method consists of high hardness and good insulating property. Samples were post annealed for understanding the thermal stability of DLCH film under N2 atmosphere annealed treatment at 300℃, 350℃ and 400℃ for one hour, respectively。The thermal stability is correlated between two characteristic indexes of DLCH film and is verified by Raman spectrum (ID/IG ratio) in visible range and XPS (sp2/sp3 ratio). The experimental shows that the DLCH film begins to induce graphitization at 300℃. The ID/IG ratio exists a positive dependency on the sp2/sp3 ratio.
The second part involves a 6μm thick polyimide film is spin-coated on Si wafer surface, followed by the N2 curing treatment of the PI film at 300℃, 350℃ and 400℃ for one hour, respectively. A 92 % curing degree at 300℃ for 1hr of PI film is measured from ATR-FTIR measurement. Higher curing degree facilitates the higher nano-hardness and nano-elastic modulus.
The third part involves the preparation of PI(6 μm)/DLCH(1μm) on Si wafer, followed by N2 gas curing treatment at 300℃for one hour to stabilize the PI/DLCH hybrid structure. The polyimide film with tensile strength 0.09 GPa can partially release the DLCH film with compressive stress 1.82 GP by wafer warpage measurement. The polyimide film can be used to passivate the DLCH film due to the electrical resistance of polyimide film (5.34x1014Ω-cm) is 2000 times higher than that of DLCH film (2.72*1011Ω-cm). The simple tape test shows that there is no peeling phenomenon on the Polyimide/DLCH structure, the microhardness test shows that the Polyimide/DLCH structure doesn’t happen cracking until under 3N load. One possible interfacial adhesion mechanism for hydrogen bond about polyimide/DLCH interface will be proposed from interfacial bonding states of epoxy/PI、PI/Cu and SAMs/DLCH hybrid structure. From experimental results, the polyimide(300℃)/DLCH(300℃) hybrid structure is one possible lower temperature process relative to polyimide(400℃)/Si3N4(400℃) with higher temperature for repassivation process.

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