本研究為應用溫度波分析法針對微奈米尺度下的薄膜進行熱傳導係數量測與分析研究。整體論文架構上分為數值模擬與實驗兩大部分，模擬方面使用ANSYS Transient Thermal作為數值分析模擬軟體，探討溫度振盪頻率以及振幅大小對不同厚度、材料熱傳導係數量測的影響，並從模擬結果上知不同厚度的待測薄膜有其所適用的溫度振盪頻率區間，且隨著薄膜厚度減少其溫度振盪頻率應隨之遞減；在温度振幅方面則是將溫度振幅控制在1°C以內的結果最為準確；模擬中分別對厚度為600 nm的PE、TiO2、SiO2三種不同材料進行數值模擬，其所適合的溫度振盪頻率皆在0.022 Hz區間左右，因此可預測對於低熱導率之薄膜材料，其溫度振盪頻率的選用僅與薄膜厚度有關。
實驗方面將實驗架構分為測試模組、溫度輸出系統、量測系統、資料後處理四部分，其中實驗流程為首先委託成大奈米中心利用電子束蒸鍍機在316不鏽鋼基板上蒸鍍一層600 nm SiO2，接著在不鏽鋼基板下表面連接熱電致冷片(Peltier)並以可程控直流電源供應器控制其溫度頻率、振幅大小；量測系統方面則分別在基板與薄膜兩不同界面放置熱電偶並擷取其溫度變化，最後將實驗結果代入MATLAB進行資料後處理以求得相位差，將相位差代入理論公式推導出熱擴散係數並將其乘上密度與比熱即可求得熱傳導係數。
實驗參數方面選用溫度振盪頻率為0.025 Hz、振幅1°C進行量測，其求得600 nm SiO2熱傳導係數為0.92(W/mK)，其中多篇參考文獻所求得之熱傳導係數以0.9(W/mK)至1.2(W/mK)最為常見，該結果與參考文獻相符合。

This study uses the temperature wave analysis method to measure and analyze the thermal conductivity of thin films at the micro-nano scale. The overall structure of the thesis is divided into two parts: numerical simulation and experiment. In the simulation, ANSYS Transient Thermal is used to discuss the influence of temperature oscillation frequency and amplitude on the measurement of different thickness and thermal conductivity of materials. From the simulation results, it is shown that the thickness of the film has its applicable temperature oscillation frequency range. As the thickness of the film decreases, the temperature oscillation frequency should decrease accordingly. In terms of temperature amplitude, the temperature amplitude should be controlled within 1°C; three different thin-film materials of PE, TiO2 and SiO2 with a thickness of 600 nm are numerically simulated, and the suitable temperature oscillation frequency is around 0.022. Therefore, it can predict that the choice of temperature oscillation frequency is only related to the film thickness for the thin-film materials with low thermal conductivity.
In the experiment, the experimental framework is divided into four parts: test module, temperature output system, measurement system, and data post-processing. In terms of experimental parameters, using temperature oscillation frequency 0.025 Hz, the amplitude 1°C to measure the thermal conductivity of SiO2 with a thickness of 600 nm, and the result is 0.92 (W/mK). Among references, the most common thermal conductivity ranges of SiO2 with a thickness of 600 nm is 0.9 (W/mK) to 1.2 (W/mK). It is shown that our experimental result is consistent with the references.

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