本論文利用金屬鐵靶以反應濺鍍法低溫製備Fe3O4磁性薄膜，並用共濺鍍摻雜鋅調整磁性質，希望在把磁性氧化物薄膜整合進Si-CMOS製程中，並應用於高頻電子元件，如電感器及EM雜訊抑制器等等。
由於Si-CMOS製程溫度往往低於450℃，所以本論文直接以400℃作為製程溫度，並探討其他磁控濺鍍製程參數，如氧分壓、基板負偏壓等等，對薄膜濺鍍於Si(100)基板的結果。由於本實驗是用金屬靶材作為濺鍍材料，在較低的氧分壓成長之薄膜，其成分是由金屬鐵及Fe3O4兩相混合物，由GIXRD量測證實隨著氧分壓的提高，薄膜中金屬鐵的相會逐漸消失，當氧分壓達到3.85％時，GIXRD量測顯示只有單一Fe3O4相存在，然而SEM的表面形貌顯示，該薄膜表面會出現團聚物。利用Raman及KPFM等做進一步分析，發現表面團聚物是金屬鐵原子聚集，證明在氧分壓3.85％時，還有少量未反應的金屬鐵，當氧分壓進一步增加至4.21％時，不僅GIXRD顯示薄膜是純相之Fe3O4且SEM表面也無團聚物出現，成功製備出純相之Fe3O4薄膜。
若要把Fe3O4薄膜應用於高頻電感器中，還要考慮磁損耗及渦電流產生大量的損耗，因此我們嘗試摻雜鋅金屬元素調整薄膜性質。摻鋅之Fe3O4薄膜，即ZnxFe3-xO4，是利用金屬鐵靶及氧化鋅靶材雙靶共濺鍍製備，其中氧化鋅靶材是利用固相合成法自行製備。藉由超導量子干涉磁化儀發現隨著鋅摻雜量增加矯頑力大幅降低，從Fe3O4的368 Oe降低至Zn0.50Fe2.50O4的50 Oe，以電性分析也可以發現只要些微摻雜鋅元素，便可明顯提高薄膜的電阻率。

This study was concerned with the thin film growth and characterization of Zn doped magnetites (ZnxFe3-xO4). The films were grown by RF magnetron co-sputtering using metallic iron target and ZnO target. The film growth was carried out in mixed Ar/O2 atmospheres with the substrate temperature of 400℃. First, we grew undoped Fe3O4 with different deposition parameters and analyzed the composition and microstructure by XRD, SEM, EDS. In low PO2 (3.47％), the XRD pattern indicated that the sample was a mixture of two different phases (Fe3O4 and Fe). As the PO2 increased to 3.85％, the iron phase disappeared and pure Fe3O4 phase was obtained. In the SEM images, some agglomerates on the surface of the films were observed. We suspected that the agglomerate might be unreacted Fe and therefore used KPFM to map the composition of film. The result confirmed that the agglomerates were indeed metallic iron. The Fe3O4 films of a pure phase with good crystallinity was obtained in PO2 = 4.21％. Secondly, the magnetic properties of Zn doped Fe3O4 films were studied by VSM. The results indicated that the coercive force was greatly reduced with the increase of zinc doping, from 368 Oe in Fe3O4 to 50 Oe in Zn0.50Fe2.50O4. In electrical measurement, the resistivity of films was found to increase by the doping of zinc. This was resulted by the increased energy barrier for electronic hopping between Fe2+ and Fe3+, which was measured to be 114 and 150 meV in Fe3O4 and Zn0.40Fe2.60O4, respectively. FMR measurements showed that the resonance peak of the Zn doped films shifted to higher field, as the consequence of an increased magneto-crystalline anisotropy. The width of resonance peak was also broadened by the Zn doping owing to an increased degree of lattice disorder incurred by the zinc doping.

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