本實驗利用五苯環素與自行合成之烷基駢苯衍生物做為主動層，製作有機非揮發性記憶體元件，藉由改變不同種類的載子捕捉層，並且利用各種不同的薄膜特性分析探討表面形貌與電性方面的影響。
本研究共分為兩個主題，主題一利用兩種不同的結構:單層載子捕捉層Ps、C-pvp與同時具有修飾層與載子捕捉層雙層結構的PS + PS、C-PVP + PαMS、PS +PMMA，藉由上述兩種不同結構來控制記憶窗口變化，其中以C-PVP + PαMS可以得到最大的記憶窗口與元件穩定性，另外在製作有機反向器時雖然C-PVP+ PαMS有最大的記憶窗口但卻因p型電流較小使得n、p型電流無法匹配，導致Vs較無法得到Vs = 1/2 VDD，反倒是記憶窗口較小的PS + PS比較匹配，較適合作為反相器。
主題二利用三種PI作為有機記憶體元件的載子捕捉層，藉由元件電性與材料特性分析來探討結構與電性的影響，分別是DA7013、DA9000、DA9000A。在這三種PI中DA7013表現出優異的n型記憶體特性，在耐久度上也有優異的表現，而DA9000A不具有側鏈所以缺乏捕捉載子的能力，故不適合做為記憶體元件卻適合製作反相器，DA9000則有相

Pentacene and N,N’-dioctadecy1-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13H27) are used as active layers to fabricate organic non-volatile memory devices with various types of charge trapping layer. Several types of semiconductor film are used to determine the impact of surface morphology and electrical properties.

In the first part, a single-layer structure that has a trapping layer, Polystyrene (Ps), and cross-linked poly (4-vinylphenol) (C-PVP) and a double-layer structure that has a modification layer and a trapping layer, PS + PS, C-PVP + Poly (a-methylstyrene) (PαMS), and PS + polymethylmethac- 0.rylate (PMMA) are used. The memory window of the double–layer structure is much larger than that of the single-layer structure. C-PVP + PαMS provides the largest memory window and the best stability.

In the second part, three types of polyimide, namely DA7013, DA9000, and DA9000A, are used as a trapping layer to fabricate non-volatile memory devices. The main structures of DA9000 and DA9000A are the same, but DA9000A does not have a side chain and thus lacks the ability to capture carriers. DA9000A is thus unsuitable for a memory device. The opposite is true for DA9000. DA7013 exhibits an excellent n-type memory feature and durability.

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