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研究生: 侯育嘉
Hou, Yu-Chia
論文名稱: 構建單電子電晶體模型以完備神經動力學架構
Single-Electron Transistor Model of Neuronal Dynamics
指導教授: 張為民
Zhang, Wei-Min
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2019
畢業學年度: 107
語文別: 英文
論文頁數: 52
中文關鍵詞: 單電子電晶體量子點神經動力學離子通道
外文關鍵詞: Single-electron transistor, Quantum dot, Neuronal dynamics, Ion channel
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  •   在神經系統模擬的研究上,有尖峰響應模型(Spike Response Model)來描述多神經系統動力學,有霍吉金-赫胥黎模型(Hodgkin–Huxley model)來描述單神經元及離子通道開關的動態變化,有菲茨休-南雲模型(FitzHugh-Nagumo model)來分析神經元的狀態演化,卻沒有任何一個模型可以用來描述離子通道這個層次的動力學。
      離子通道的動力學之所以重要,是因為影響整個神經傳遞最基本的因素就只有離子的變化而已。但是過去的模型都用電阻來模擬離子通道,因此無法探討微觀中每個離子的動力學。我們利用可控閘極電壓式單電子電晶體模型(Controllable gate voltage single-electron transistor model)來完整描述離子通道的行為。
      在這個模型中,我們需要考慮時變的閘極電壓。因此我們以微擾理論給出閘極電壓與系統環境間耦合強度的關係。並利用非平衡格林函數(Non-Equilibrium Green's Function)給出系統的粒子數及電流隨時間的演化。
      我們整合霍吉金-赫胥黎模型及可控閘極電壓式單電子電晶體模型做反向傳播(backpropagation),提出一個新的神經系統模型。利用可控閘極電壓式單電子電晶體模型模擬單離子通道算出的電流,加上霍吉金-赫胥黎模型給出單神經中離子通道開啟的數量,可以得到膜電位的變化。再修正霍吉金-赫胥黎模型所得到的膜電位誤差,做多次反向傳播後誤差將會收斂。最後我們再加入尖峰響應模型,考慮其他神經元的訊號以及動作電位後的閥值修正,即可得到完整的神經系統模型。

      In neuronal dynamics studies, the spike response model is used to describe multiple neurons dynamics. The Hodgkin-Huxley model is used to describe the dynamics of single neuron and the total ion channel gates. The FitzHugh-Nagumo model is used to analyze the state evolution of single neuron. However, no model can be used to describe the dynamics of single ion channel.
      The dynamics of a single ion channel is important, because the most fundamental factor affecting the entire neuronal dynamics is the dynamics of every single ion. But in the past, all models used a resistor to replace a single ion channel. So, the dynamics of single ion in the microscopic cannot be explored. And so now, we use a gate voltage controllable single-electron transistor model to describe the dynamics of the single ion channel.
      In this model, we need to consider the time-dependent gate voltage. Therefore, we use the perturbation theory to give the relationship between the gate voltage and the coupling strength between the system and environment. And the non-equilibrium Green's function is used to give the evolution of the number of particles and the current over time.
      We combine the Hodgkin-Huxley model with a gate voltage controllable single-electron transistor model. Then use backpropagation approach to reduce the error. Finally, we propose a new complete neuronal dynamics algorithm model.

    CHAPTER 1 INTRODUCTION 5 1.1 NEURONAL DYNAMICS 5 1.2 SINGLE-ELECTRON TRANSISTOR 7 1.3 THESIS OVERVIEW 8 CHAPTER 2 SINGLE-ELECTRON TRANSISTOR DYNAMICS 11 2.1 THE MODEL OF SINGLE-ELECTRON TRANSISTOR 11 2.2 THE RELATION BETWEEN GATE VOLTAGE AND COUPLING STRENGTH 13 CHAPTER 3 EQUATION OF MOTION 17 3.1 RETARDED AND LESSER GREEN’S FUNCTIONS 17 3.2 THE NUMBER AND CURRENT OPERATORS 18 3.3 RESULT AND ANALYSIS 19 CHAPTER 4 NEURONAL DYNAMICS 27 4.1 NEURON CONDUCTION MECHANISM 27 4.2 ACTION POTENTIAL 27 4.3 HODGKIN-HUXLEY MODEL 35 4.4 FITZHUGH-NAGUMO MODEL 38 4.5 SPIKE RESPONSE MODEL 42 4.6 SINGLE-ELECTRON TRANSISTOR MODEL 43 CHAPTER 5 CONCLUSION 48 CHAPTER 6 BIBLIOGRAPHY 50

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