本論文使用新穎之化學機械研磨步驟，來改善銅銦鎵二硒 (CuInGaSe2，簡稱CIGS) 吸收層薄膜的表面粗糙度及平坦度，藉此可以使後序之硫化鋅薄膜更均勻及幫助有效pn介面之形成，因此有機會提升薄膜型太陽能電池元件的光電轉換效率。
研磨之CIGS薄膜製作:首先將銅銦鎵先驅物濺鍍於鍍有鉬背電極之含鈉玻璃基板，經高溫硒化後形成CIGS吸收層薄膜。研磨實驗過程中發現；研磨液中溴水濃度、轉速、研磨時的下壓力，皆會影響薄膜的表面粗糙度及平坦度。本實驗再輔以掃瞄式電子顯微鏡 (SEM)、X光繞射分析儀 (XRD)、Zygo白光干涉儀 (White Light Interferometers) 等儀器，對薄膜之表面形貌、組成成份、晶體結構與薄膜粗糙度及厚度進行分析；藉此數據來瞭解化學機械研磨後，CIGS薄膜粗糙度及平坦度的改善。

In this dissertation, I sputtered Copper-Indium-Gallium metallic precursors on Mo-coated soda-lime glass substrates followed by high temperature selenization process to form the CuInGaSe2 (CIGS) absorber films. I used a novel chemical mechanical polishing process to improve the roughness or flatness of the CIGS absorber layer. Improved CIGS film roughness could benefit for better ZnS coverage and therefore better effective junction formation, which in term can improve the conversion efficiency of the CIGS solar cells.
In this study, I found that Br2 concentration in slurry, revolution speed of the slurry solution, and down force of polishing can significantly influence on CIGS film’s roughness or flatness. I used scanning electron microscope (SEM), X-ray diffraction (XRD), and Zygo white light interferometer to analyze film’s morphology, film composition, crystalline phase/orientation, and topography of the film. The best condition in my study is 1 Kg down force, 6x revolution speed, 120 sec polish time with Br2 concentration of 0.050% and using 70 nm abrasive.

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