隨著摩爾定律即將走向極限，人們開始轉向「超越摩爾定律」的概念，不單純以提高單位體積內電晶體密度為目標，而是提升產品中各元件的效能，即相同尺寸的元件能夠提供使用者更佳的效能。此外，除了消費性電子產品的市場外，近年加速發展幾個重要的科技如5G通訊、無人機、物聯網、車聯網、人工智慧、電動車等，這些應用中皆會涉及高功率元件的使用，以提供高功率、高轉換效率、低消耗的元件，進而使這些科技能夠開啟新一代的半導體市場，半導體將從Si時代進展到以GaN、SiC為主的寬能隙半導體時代。
當元件往下個世代發展，將產品中各元件整合的構裝技術也必須更新，在高功率元件的應用中，由於電子元件需要承受高電壓、高電流與高溫的嚴苛環境，且連結元件間的接點需要高熔點、低電阻、高熱傳的材料特性，開發能夠提供高可靠度、良好熱穩定性的元件、基板、導線間連接的材料成為重要高功率元件封裝的重要課題。過去人們使用的接合材料以燒結Ag或高溫銲錫為主，燒結Ag的製程溫度低，可以提供高熔點、高初始強度、高熱傳、低電阻的接點，但材料成本高且隨著時效促使孔洞擴散會使可靠度下降，熱穩定性不佳；高溫銲錫則是材料成本低，但接點的介金屬化合物相本身低電阻、低熱傳導即脆性的特性，並不利於未來高功率元件的應用。
本實驗室過去開發Cu/Ni/Ga/Ni/Cu的無介金屬化合物的固溶型暫態液相接合法，配合聲化學合成法製備次微米Ga粒子基漿料，使Ga基材料可以在室溫下儲存，並且利於工業製程中的轉移方法，過去最佳的接合條件為利用Cu/0.1 μm Ni/酸性助焊劑/次微米Ga粒子/0.1 μm Ni /Cu的三明治接合結構於300 ℃、10 MPa下熱壓接合1小時，得到接合界面為FCC-(Cu, Ni, Ga)固溶相的接點，具有13 MPa的接合強度，且隨著長時間的時效處理後，其接合強度會逐漸提升，顯示具有高熱穩定性。然而在工業應用中，目前的接合溫度與壓力過高，且尚未有次微米Ga粒子塗佈量的定量化數據，若以商業化為目標，必須要能夠將此接合製程優化，降低接合溫度與壓力，並提供定量的Ga粒子塗佈參數，以朝向商業化目標邁進。由於此技術的接合機制為利用液態Ga與Ni/Cu基材擴散反應，若能降低Ga的塗佈量可以將低完成固溶相的接合結構的接合溫度與壓力，本研究中除了探討生化學合成法製備的次微米Ga粒子基漿料形貌、穩定性。並研究微量滴管、旋轉塗佈與噴墨列印的轉移製程轉移10 wt.%的次微米Ga粒子基漿料的塗佈厚度與固溶型暫態液相接合的結果，目前的轉移方法尚未能達到穩定重現固溶型暫態液相接合的階段，但可根據本文中的設計邏輯優化，進而降低Ga粒子塗佈量。

To satisfy the demands of interconncetion in power electronics. An interconnection method using Ga as interconnection materials has been developed. Ga is made into submicron particles by sonnochemistry. In our previous work, a solid-solution type TLP bonding is developed. Submicron Ga-based paste is used in Ni-plated Cu substrate to form a IMC-less bonding interface under bonding condition 300 ℃, 10 MPa, 1 h. Bonding interface will be FCC-(Cu, Ni, Ga) phase instead of IMC phase. The shear strength is around 13 MPa and the strength will gradually increase after thermal aging. In this thesis we measured the relationship of initio solid concentration of Ga SMPs synthesis and particles distribution. Also the stability of storage in ambient environment and different pH value soluiton. The Ga SMPs solid concentration less than 10 wt.% possess weak acidicity (pH=5.6) and good dispersity which can be storaged more than several weaks. Low solid concentration (10 wt.%) is recommended to transfer less Ga SMPs on substrate. The transfer method using now can only provide Ga SMPs thichness around 1 μm level which can not perform this solid-solution type TLP bonding. Therefore, a proposal is given to predict the droplet thickness and radius. Using inkjet printer to control the droplet volume and UV light cleaning to decrease the contact angle of paste and substrate. Lower droplet volume and proper contact angle is expecting to achieve thinner Ga droplet and Ga SMPs layer.

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