本論文主要著眼於研究以有機金屬氣相沉積法成長砷化鎵系列之長波長雷射暨光檢測器，所使用之材料包含InGaAs/GaAs, InGaAsN(Sb)/GaAs, GaAsSb/GaAs等多種量子井結構，並且針對其磊晶條件、光學特性、以及元件特性做深入地探討。在InGaAs/GaAs量子井雷射部份，我們調整其磊晶參數並將之最佳化後，所製作的雷射具有極低的起振電流密度(140 A/cm2)，並能於室溫連續波操作，其雷射放光波長為1.22μm；此外，由於InGaAs/GaAs優良的載子侷限能力，因此其特徵溫度可高達146.2K，顯示InGaAs在低成本的長波長雷射方面，相當具有潛力。另一方面，於低溫、低TBAs/III比的條件下成長高品質、高應力InGaAs/GaAs量子井，也為氮化物半導體—InGaAsN雷射提供良好的研究起點。
為了達成1.3μm操作，InGaAsN/GaAs量子井結構也被應用來作為雷射元件之主動層。藉由降低磊晶溫度、提升DMHy/V比例可以使得不易溶入的氮原子組成提升，然而由於TEGa以及DMHy會產生共裂解效應，影響量子井的厚度以及組成控制，因此我們使用固定DMHy流量僅改變TBAs注入量的方式來改變InGaAsN中氮的組成。而InGaAsN/GaAs量子井的放光效率，在經由一連串的磊晶參數暨熱回火條件最佳化之後，其強度提升了十倍之多。在製作成雷射元件之後，該元件可於1.314μm室溫脈衝波操作，並具有極高的特徵溫度，約可達140K，成功地展示了該材料的潛力。然而由於該元件之起振電流較高(~1.5 KA/cm2)，因此尚需要進一步提升其磊晶品質。後續則利用Sb的界面活性效應，降低存在於InGaAsN中的侷限能階，並改善其磊晶界面品質，進而使得InGaAsN的光特性得到大幅提升；此外，常見於InGaAsN材料中的鋁污染效應也可藉由Sb的界面效應移除，進而使得InGaAsNSb/GaAs量子井雷射的起振電流降低。
此外，本論文也針對GaAsSb/GaAs第二型量子井雷射進行研究。藉由低As/III比以及高磊晶成長溫度(610oC)，可以提昇銻原子的溶入量，含量最高可達32%而發光波長則高至1.27μm。而提高Sb/V比例不僅無法進一步提升銻的組成，反而因銻原子累積於晶片表面，使得其介面特性和光特性劣化。為了拉伸發光波長，也嘗試製作GaAsSb-InGaAs之雙層量子井結構，並成功使得其波長延伸至1.30μm。此外，本實驗中所製作的兩個GaAsSb/GaAs量子井雷射，成功於1.13以及1.20 μm達成室溫脈衝波雷射操作，並且具有相當高的特徵溫度，分別為146K和130K，是目前已知以有機金屬氣相沉積法成長GaAsSb/GaAs量子井雷射之最高值。
最後，我們也嚐試製作以ITO透明電極之InGaAsN MSM光檢測器，並藉由新穎設計的MIMS結構將其光暗電流比提昇至45倍以上。
本論文成功展示了多種砷化鎵系列的長波長雷射，該雷射普遍具有良好的溫度特性，並且可於為達成低成本、高性能雷射之必要條件之ㄧ，顯示該砷化鎵系列材料續經過特性改善之後，極有潛力可取代現有之磷化銦系列雷射。

The main purpose of the dissertation is to develop the GaAs-based materials, such as including the highly strained InGaAs/GaAs, InGaAsN/GaAs and type II GaAsSb/GaAs quantum wells (QWs) which are capable of delivering long wavelength operations. The growth conditions, optical properties, and devices characteristics are systematically studied. After optimizing the epitaxial parameters, the InGaAs/GaAs lasers were continuous-wave (CW) operated at 1.22 μm under extremely low threshold current density (Jth) ~ 140 A/cm2 (Jth/QW = 46.7 A/cm2/well). The demonstrated InGaAs QW laser has the lowest transparent current density (Jtr) and among the reported InGaAs lasers longer than 1200nm. The characteristic temperature of 146.2K thus obtained indicates the excellent temperature characteristics and good electron confinement. In addition, the high quality InGaAs/GaAs QW grown under low temperature and TBAs/III ratio also provides a good starting point for the InGaAsN alloys by MOVPE.
To extend the emission wavelength, the dilute-nitride alloys -InGaAsN grown by MOVPE were studied. Using low temperature, moderate growth rate, high DMHy/V ratio and low indium composition would enhance nitrogen incorporation. Besides, the DMHy/V ratio was adjusted by altering TBAs flows only to avoid the parasitic reaction between TEGa and DMHy, which eventually led to stable control of indium composition and growth rates of InGaAsN layer. After optimizing the growth parameters and thermal annealing conditions, the PL intensity of InGaAsN/GaAs DQWs was improved by almost 10 times. The InGaAsN edge-emitting lasers were fabricated and showed very good temperature characteristics. The 1.3 μm operation was realized, and the emission wavelength was 1314.52nm. However, the Jth was as high as 1.5 KA/cm2, and still need to be further reduced for actual application. Optimizing InGaAsN alloys via the use of purified nitrogen precursor, and applying the Sb surfactant effect could improve the optical properties of InGaAsN/GaAs lasers.
By using the TMSb surfactant flow, the PL peak intensity and FWHM of InGaAsN/GaAs QWs were both improved. The localization effect was suppressed by introducing the TMSb flow before growing the InGaAsN layer. Furthermore, the aluminum issues of InGaAsN were resolved by the Sb surfactant. The origin of this improvement was attributed to the better crystal quality and lower surface roughness of the Sb-treated samples. The aforementioned advantages demonstrated that the Sb surfactant could be a very effective way to improve the optical properties of InGaAsN layer, enabling the realization of the InGaAsN lasers of low threshold current density grown by MOVPE.
The other high strained QWs, such as GaAsSb/GaAs, were also proposed as possible device structures for long wavelength lasers. The growth conditions and optical properties of GaAsSb alloys were systematically studied. Lowering the AsH3/III ratio and increasing growth temperature to 610 oC could increase the Sb incorporation of GaAsSb. High TMSb flow rate would reduce Sb composition, suppress the growth rate and deteriorate the interface quality due the excess Sb coverage on GaAs surface. The highest Sb composition of GaAsSb obtained was as high as 0.32 and the longest PL wavelength achieved was 1273nm, limited by our MOVPE system design. Therefore, the GaAsSb/InGaAs bi-layer structures were proposed, which showed a longer wavelength at 1295nm with moderate PL intensity. Lastly, two GaAsSb/GaAs DQWs edge-emitting lasers were fabricated. The lasing peaks were 1130 and 1203nm, and these two different diode lasers demonstrated high characteristic temperature of 146K and 130K. To our knowledge, the lasing wavelength and the T0 of the GaAsSb/GaAs DQWs laser are among the best results of GaAsSb/GaAs lasers grown by MOVPE.
Furthermore, the radio frequency (RF)-sputtered indium-tin-oxide (ITO) layers as the transparent contact layer of the metal-semiconductor-metal (MSM) photodetectors (PDs) were studied. The metal-insulator-metal-semiconductor (MIMS) has the highest photo/dark current ratio of 45.29 under 0.5 V bias for the much improved surface roughness between the SiO2 layer and the InGaAsN bulk. Further improvements on the material quality of InGaAsN layers, an increase in the absorption layer thickness, and the use of AR-coating were necessary to obtain higher responsivity and quantum efficiency.
Despite the higher threshold current density of InGaAsN and GaAsSb QW lasers, the foregoing GaAs-based lasers thus demonstrated have good temperature characteristics, and are also capable of delivering 1.3 μm operation. In conclusion, the GaAs-based materials are experimentally proved as suitable candidates for replacing the conventional InP-based lasers.

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Chapter 2
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Chapter 4
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Chapter 7
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