| 研究生: |
金志昀 Chin, Chih-Yun |
|---|---|
| 論文名稱: |
溴化四烷基銨鹽作為電子收集層應用於高分子異質接面太陽能電池 Tetra-n-alkyl Ammonium Bromide salts as Electron Extraction Layers in Polymer Bulk Hetero-junction Solar Cells |
| 指導教授: |
溫添進
Wen, Ten-Chin |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2011 |
| 畢業學年度: | 99 |
| 語文別: | 中文 |
| 論文頁數: | 85 |
| 中文關鍵詞: | 太陽能電池 、電子收集層 、溴化銨鹽 |
| 外文關鍵詞: | solar cell, electron extraction layer, ammonium bromide |
| 相關次數: | 點閱:50 下載:0 |
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此篇論文主要是利用溴化四烷基銨鹽作為電子收集層的材料,應用於高分子異質接面太陽能電池中,其中本論文分為兩個部分。
第一部分包含了不同碳鏈長度之溴化四烷基銨鹽粉末及薄膜結晶型態之探討,並進一步的用在太陽能電池中,由實驗結果發現此些溴化銨鹽皆可有效的降低陰極的功函數,使陰極與主動層達歐姆接觸,進而提升太陽能電池的光電轉換效率,其中四正辛基溴化銨鹽及四正癸己基溴化銨鹽的系統中開路電壓光及填充因子分別可達0.58V及0.64,且在癸己基溴化銨鹽的系統中電轉換效率甚至可達4.19%,可以媲美以鈣做為電子收集層的太陽能電池。
第二部分為探討溫度變化對四正辛基溴化銨鹽薄膜的影響,由實驗結果發現隨著溫度的升高四正辛基溴化銨鹽薄膜修飾電極的效果漸漸消失且元件效率也開始降低,而當加熱過四正辛基溴化銨鹽的熔點,四正辛基溴化銨鹽薄膜將會轉變為一層絕緣層,使開路電壓及填充因子分別降為0.34V及0.28,且光電轉換效率只剩0.84%。
In this dissertation, quaternary ammonium bromide salts (QABs) is applied for the electron extraction layer (EEL) in the polymer BHJ solar cell, the investigations included two sections as follows.
The first section reports the powder and film crystallization of QABs with different alkyl chain length and, which is used in PV cells, the device performance shows that QABs can reduce the work function of cathode, causing the active layer and cathode to become ohmic contacted, thus enhancing the photoelectric conversion efficiency of PV cells. PV cells of tetraoctylammonium bromide (TOAB) and tetrahexadecyl ammonium bromide (THDAB) used as EEL shows the open circuit voltage (0.58V) and fill factor (0.64), and THDAB results in a better power conversion efficiency (4.19%) than Ca.
The second section reports the thermal effect of the TOAB film. The device performance shows that the effect of modified electrode by TOAB film gradually disappears with the temperature increase , hence reducing the power efficiency of PV cells. When the temperature surpasses TOAB melting point, TOAB film will be transformed into an insulator. The open circuit voltage and fill factor will decrease to (0.34V) and (0.28), power efficiency descending steeply to (0.84%)
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校內:2016-08-04公開