本實驗先利用化學氣相沉積法(Chemical Vapor Deposition, CVD)製程，利用Zn粉(99.999%)與O2/N2(10:30 sccm)混合氣體，於650°C、1 torr壓力下，合成單晶的氧化鋅奈米線於Si或Sapphire基板上。再利用離子佈植技術(Ion Implantation)，分別以30 keV、40 keV與50 keV的佈植能量，將N+離子摻雜進氧化鋅奈米線中，佈植劑量皆為5×1015 ions/cm2。佈植完成後利用快速退火技術(Rapid Temperature Annealing, RTA)修復奈米線上受損的晶格，及活化摻雜離子。退火溫度為600°C ，最高溫度持溫時間3 min。實驗目的主要為利用離子佈植技術(Ion Implantation)製作出氮摻雜的氧化鋅奈米線。
在分析上利用掃瞄式電子顯微鏡 (Scanning Electron Microscopy, SEM)及穿透式電子顯微鏡 (Transmission Electron Microscopy)了解其表面形貌與微結構，觀察N+離子佈植對奈米線的影響。配合歐傑電子能譜儀(Auger Electron Spectrometer, AES)及顯微拉曼光譜儀 (Microscopes Raman Spectrometer)技術，確定N元素是否有摻雜進氧化鋅奈米線及其摻雜濃度。最後在利用光致螢光激發光譜儀 (Photoluminescence, PL)，觀察N摻雜的奈米線，在室溫及低溫發光性質。同時利用電性量測，觀察佈植前後單根氧化鋅奈米線的電阻率差異；並製作單根奈米線的p-n接面二極體，證明N+離子佈植確實可以用於p-type氧化鋅奈米線的製作。

In this research, we manufactured the ZnO nanowires on Si and sapphire substrate by CVD process. The source of reaction are Zn powder (99.999%) and O2/N2 mixed gas. Growth temperature is 650°C and work pressure is 1 torr. Subsequently, we doped the nitrogen atoms into ZnO nanowires by ion implantation. The incident energy of nitrogen atoms were 30 keV, 40keV and 50 keV, respectively. The dose of nitrogen atoms were 5×1015 ions/cm2 for all ZnO nanowires . After ion implantation, all sample were anneaed by RTA method at 650°C for 3 mins.
The image of morphology is analyzed by SEM. Microstructure, defcet surrounding, defect distribution and defect size were resolved by TEM. The nitrogen atom in ZnO nanowires is confirmed by Auger electron spectrometer and Raman spectra. Besides a detailed investigation with photoluminescence of the annealing behavior in the N2 atmosphere is presented. I-V measurement showed the difference in resistivity between un-doped ZnO nanowires and N-doped ZnO nanowires. The p-n junction in single ZnO nanowire were fabricated by nitrogen ion implantation.

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