在本論文中，我們準備了高品質的高介電係數溶液式BZT閘極介電層薄膜作為五環素有機薄膜電晶體，元件的特性表現出了好的臨界電壓(-1.1V), 次臨界擺幅(0.51 V/dec), 電流開關比(2.3x102), 載子遷移率(4.98cm2/V-1S-1)。更進一步討論，為了得到更好的元件特性，我們利用高介電係數HfO2與 BZT之雙層閘極介電層結構，這些元件展現了好的元件特性，例如低臨界電壓(-0.25V), 低次臨界擺幅(0.46 V/dec), 高電流開關比(103), 高載子遷移率(3.65cm2/V-1S-1 )以及低操作電壓，我們更詳細地對化學與物理特性進行分析，其中包括SEM, XRD, AFM分析。
綜上所述，我們已經成功地展示高品質溶液式BZT及HfO2雙層結構之閘極介電層並運用於有機薄膜電晶體，這項工作提供了很多優勢，如低臨界電壓、低次臨界擺幅、高電流開關比、高載子遷移率以及低操作電壓，這也說明了元件有著優秀的操作特性。

In this thesis, we prepared the high quality solution-processed high-κ Barium Zirconate Titanate (BZT) as gate dielectric for pentacene-based organic thin film transistor (OTFT) devices were demonstrated. The performance of the devices shows good threshold voltage(-1.1V), subthreshold swing(0.51 V/dec), current on/off ratio(2.3x102), mobility of 4.98cm2V-1S-1. Further, in order to get better performance of the devices, we utilized the double structure with high-κ HfO2 and BZT. These devices exhibited good performances, such as low threshold voltage(-0.25V), low subthreshold swing(0.46 V/dec), high current on/off ratio(103), high mobility of 3.65cm2V-1S-1 and operate at low gate voltage. We analyzed in detail with chemical and physical characteristics including SEM, XRD, XPS, AFM.
In summary, we have been successfully demonstrated high quality double structure with solution-processed oxide(BZT) and HfO2 applied as gate dielectric on OTFT. This work provides a lot of advantages, such as low threshold voltage, low subthreshold swing, high current on/off ratio, high mobility and operate at low gate voltage which indicates good performance of devices.

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