在本論文中，第一部分探討微波電漿輔助氣相沉積超奈米鑽石薄膜在厚度約10奈米金屬鎢與矽基板上的成長機制與晶格方向關係，金屬鎢與碳材形成(001)面晶相碳化鎢(WC)，此中間層直接增加鑽石的種晶(seeding)吸附性與均勻性。另外，(001)面晶相碳化鎢也增進奈米鑽石在(111)面上的成長方向，產生有序的鑽石晶格與緻密薄膜品質。經由系統性穿透式電子顯微鏡的分析發現有使用鎢金屬的超奈米鑽石薄膜，可獲得較高的成核密度與結晶性佳的超奈米鑽石薄膜。
另外，使用偏壓成核微波電漿輔助氣相沉積方式來成長奈米鑽石薄膜，在定電流偏壓模式下，電流與溫度參數影響奈米鑽石薄膜形貌，在定電流320mA偏壓下與8000C基板溫度可生成厚度約600奈米柱狀結構之奈米鑽石薄膜，高深寬比可應用於場發射元件及表面增強拉曼生物分子檢測使用。另外，定電流400mA偏壓下與9000C基板溫度之參數可生成較小深寬比奈米柱狀結構之鑽石薄膜。定電壓部分，使用-350V偏壓模式下，可成長出緻密與均勻性佳的奈米鑽石薄膜。利用拉曼頻譜儀與穿透式電子顯微鏡的分析來檢測鑽石薄膜內鍵結結構、晶格方向及與矽基板之磊晶關係。
第二部分，探討在1-3%甲烷與20%氮氣摻雜奈米鑽石薄膜成長參數下，鑽石之表面形貌與導電度，甲烷濃度提升亦增加導電度。在3%甲烷與20%氮摻雜成長出類多層石墨烯包覆奈米鑽石之結構，類多層石墨烯結構使得薄膜導電度顯著提升。由於奈米鑽石同時具有化學惰性特質，本文示範三明治結構(奈米鑽石-氮摻雜奈米鑽石-奈米鑽石)電阻式加熱器包覆應用於生醫手術刀，可增加器材的使用壽命。另外，高導電度的氮摻雜奈米鑽石成功地應用在鋰電池石墨陽極電極，包覆性的結構減少電池內電阻值與較佳的化學抵抗特性成功提升電池高容量的生命週期。
第三部分則是使用熱氣相化學沉積法成長二維材料石墨烯，不同於連續狀石墨烯薄膜，此成長方向形成枝葉狀，在CH4/H2低壓製程環境下，穩定的熱平衡條件下形成具有單層單區域(domain)及高長寬比石墨烯薄膜，此特性可作為低啟動電壓之石墨烯場發射元件。另外，利用背電極場效電晶體結構來量測載子遷移率，枝葉狀石墨烯可獲得高達9200cm2/Vs的電洞遷移率。在光響應特性上，在大於1mV以上之偏壓，枝葉狀石墨烯呈現負光電導特性，源於熱載子散射造成光電流下降。另外，在低電壓1mV偏壓下，由於環境因素使得本質石墨烯呈現p型摻雜造成電極與石墨烯形成能帶偏移(bending)的內建電場，以至於正及負光伏效應顯著提升。

In the dissertation, the studies are divided into three parts. First, to deposit a tungsten layer on nanodiamond pre-seeded silicon substrates to observe the effects on the deposition of ultrananocrystalline diamond (UNCD) films. Tungsten carbide formed by reactions of the tungsten layer with carbon containing plasma species provides favorable (001) crystal planes for nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the total density of diamond seeds/nuclei. UNCD films grown at different gas pressures on pre-seeded nanodiamond and heteroepitaxially grown diamond nuclei were characterized by Raman scattering, FE-SEM, and HR- transmission electron microscopy.
Bias-enhanced nucleation and growth (BEN-BEG) of carbon nano-pillars containing UNCD on silicon substrates by low-pressure MPECVD in a hydrogen-rich gas mixture with methane is reported. Direct-current (DC) biasing of the substrate in a constant-current mode is applied to substrates, which are pre-heated to 8000C and 9000C, to result in a negative bias voltage of greater than 350 volts through-out the nucleation and growth process. Sputtering of UNCD clusters and ion-assisted chemical vapor deposition by bias enhanced bombardment of energetic ions is attributed to the formation of carbon nano-pillars. The porous UNCD with high-density nano-pillars exhibits improved electron field emission characteristics compared to smooth and solid UNCD films. In addition, a SERS application for biomedical molecules detection using nano-pillars diamond due to high effective surface areas.
Second, nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) and multi-layer-graphene-like hybrid carbon films have been synthesized by microwave plasma enhanced chemical vapor deposition (MPECVD) on oxidized silicon which is pre-seeded with diamond nanoparticles. MPECVD of N-UNCD on nanodiamond seeds produces a base layer, from which carbon structures nucleate and grow perpendicularly to form standing carbon platelets. High-resolution transmission electron microscopy and Raman scattering measurements reveal that these carbon platelets are comprised of ultrananocrystalline diamond embedded in multilayer-graphene-like carbon structures. UNCD grains in the N-UNCD base layer and the hybrid carbon platelets serve as high-density diamond nuclei for the deposition of an electrically insulating UNCD film on it. Biocompatible carbon-based heaters made of low-resistivity hybrid carbon heaters encapsulated by insulating UNCD for possible electrosurgical applications have been demonstrated. In addition, by using a novel nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) encapsulated NG/copper complex anodes. N-UNCD enables robust solid electrolyte interphase (SEI) formed by NG/electrolyte chemical reactions and suppresses stress induced cracks of the SEI and NG particles and the subsequent loss of anode conductivity.
Third, the monolayer graphene (Gr) dendrite was synthesized by thermal CVD. The unique dendritic structure of the graphene has a high aspect ratio with primary and secondary branches that exhibits excellent EFE properties. Electrical characteristics for a single main branch were investigated from graphene back-gate FETs. The highest hole carrier mobility is up to 9200 cm2/Vs after 2500C thermal treatment in vacuum. The photoresponse of Gr dendrites applied above 1mV bias exhibits negative photoconductivity. Hot carriers scattering effect influence carriers transport under light illumination. It reduces photocurrent due to hot carriers scattering. The strong effects of positive and negative photovoltaic are appeared at a bias condition of 1mV. It is related to band bending with doping effect among graphene-electrode contacts.

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