本論文研究在多孔矽基板上成長單晶氮化碳化矽薄膜，利用多孔矽層高阻抗的特性來發展高性能、高電壓、高溫之氮化碳化矽元件。在本論文中，吾人先將矽基板表面以電化學陽極蝕刻法（Electrochemical Anodization Method）形成多孔矽層（porous Si），再以快速升溫化學氣相沈積法（Rapid-Thermal-CVD）在多孔矽層上沈積單晶氮化碳化矽（β-SiCN）薄膜，並發展具“氮化碳化矽／多孔矽”結構的高電壓及高溫操作能力的異質接面UV光感測器。由實驗結果知，氮化碳化矽／多孔矽異質接面UV光二極體在室溫下光／暗電流比（Ip-Id）/Id為95倍，而在高溫200℃下仍保有2～3倍。此外，反相崩潰電壓在室溫下為48V，而在高溫190℃下其反相崩潰電壓仍可保持在15V，相較於成長於單晶矽基板上之相同元件特性改善約達200﹪之多，證實所研製的元件頗適合於高溫環境中運用。

Silicon carbon nitride (SiCN) has been a promising material for many studies owing to its better physical characteristics for wide applications. In this thesis, we develop a technique for growing single-crystalline SiCN films on PS(porous-Si)/Si substrates. The high resistivity and less stress unique characteristics make the PS layer an attractive material for high temperature and low leakage current device. In this work, the PS layers are firstly formed on the Si substrates by an electrochemical anodization method. Next, SiCN films are deposited by a RTCVD system. With the SiCN films, new SiCN ultra-violet (UV) light detectors devices for application in high voltage and high temperature are developed. The performance of the SiCN/PS hetrojunction UV light detector is examined by the photo/dark current ratio and reverse breakdown voltage. The current ratio is about 95 at room temperature and 2~3 at 190℃. The reverse breakdown voltage is about -48V at room temperature and -15V at 190℃. Based on the experimental results, the developed SiCN films on porous-Si are more suitable for preparation of high temperature UV light detectors.

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