本論文是利用電漿輔助式分子束磊晶系統(PA-MBE)，在矽金字塔基板上進行成長氮化銦鎵(InGaN)奈米柱。由於金字塔結構的原因，使得在單一的成長條件下，調控出金字塔每一面上擁有不同銦和鎵的含量的奈米柱，因此造成金字塔四面發出不同波段的光，其製造出氮化銦鎵奈米柱發白光的效果。
由掃描電子顯微鏡(SEM)我們可以知道每一面奈米柱形貌不同，當銦通量(In flux)和鎵通量(Ga flux)直接撞擊到金字塔上，使得奈米柱直徑較大，當銦通量和鎵通量對於金字塔是遮蔽面，使得奈米柱直徑較小，其長度並沒有太大差異性，約為1μm。此外，氮通量(N flux)主要是控制奈米柱成長方向，所以在金字塔上成長氮化銦鎵奈米柱，明顯的發現奈米柱往頂部傾斜的現象。而光致螢光光譜(PL)量測結果，氮化銦鎵奈米柱成功發出白光，此光譜呈現一個連續現象，我們也透過陰極激發發光(CL)及能量色散X-射線光譜(EDS)量測來證明金字塔上四面氮化銦鎵奈米柱組成成分不同及發光不同。最後我們將成長的氮化銦鎵奈米柱施加一個機械力並進行光致螢光光譜量測，其結果發現光譜有藍移現象，其藍移約7nm。

In this study, InGaN nanorods were grown on pyramided Si substrate by plasma-assisted molecular beam epitaxy system (PA-MBE). We have grown white-light emitting InGaN nanorods on pyramid Si substrate with single flux ratio, thus causing different In and Ga contents and different emission colors on each face of pyramid Si substrate. From SEM images, the different morphologies of the nanorods are revealed on each face of pyramid Si substrate. When In flux and Ga flux impinges vertically on pyramid, the InGaN nanorods show large rod diameter. However, when In flux and Ga flux impinges with grazing incidence on pyramid result in nanorods with small diameter. The length of the nanorods is about 1 μm. In addition, the direction of N flux enables to control the growth direction of InGaN nanorods on pyramid substrate, which we obviously found nanorods to tilt toward the top of pyramid. PL spectrum measurement results show that the white light emission has been achieved successfully by InGaN nanorods, and the spectrum exhibits a continuous emission range. We have confirmed that each face of pyramid substrate has different composition and different light emission by using spatial resolved catholuminescence (CL) and electron energy loss spectroscopy (EDS) measurements. Finally, we apply the mechanical force on InGaN nanorods, and PL spectrum shows the emission peaks with blue shift of 7 nm due to the photo-piezoelectric effect of III-nitride semiconductors.

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