本論文之主要是利用共濺鍍系統成長以氧化鋅為基底之薄膜。透過調整氧氣濃度以及濺鍍功率而得到功能性不同之薄膜。在複合型氧化鋅銦錫薄膜之製備中，透過調變氧化鋅及銦錫氧化物的比例以及氧氣濃度以達到改善原本氧化鋅薄膜之目的。
首先，我們應用氧化鋅薄膜做為主動層與二氧化矽做為閘極介電層來製作薄膜電晶體，可以得到場效遷移率3.84 cm2/Vs，臨界電壓1.5 V，次臨界擺幅0.48 V,電流開關比4.6x104。此外，我們發現濺鍍功率以及氧含量會造成元件光電特性之影響，然後，在較好特性之元件參數中，我們透過參雜氧化銦以增強元件之特性。
在實驗第二部分，我們把非晶氧化鋅銦錫薄膜與二氧化矽做為閘極介電層來製作薄膜電晶體作在玻璃基板上。在室溫下沉積下得到臨界電壓0.9 V，電流開關比4.7x105，次臨界擺幅0.294 V，場效遷移率5.32 cm2/Vs。此外，我們指出元素含量組成對元件電特性之影響，然後，改善電特性的確切來源，並最佳化氧化鋅銦錫薄膜中，鋅，銦和錫組分的影響，以改善元件特性。
最後，我們對於元件之可靠度做了一些探討。每經過兩個禮拜之後，我們拿先前作的元件再重複量測，發現氧化鋅銦錫薄膜電晶體其退化情型比其氧化鋅薄膜電晶體嚴重。對於氧化鋅和氧化鋅銦錫薄膜電晶體來說：臨界電壓分別偏移了1.3V, 0.6V;電流開關比分別減少了大概10倍,30倍;次臨界擺幅分別變差了2倍和3倍。此外，元件除了對於時間有影響之外，照光的環境下量測，我們發現其退化現象。氧化鋅薄膜電晶體在當閘極電壓為0 V，波長為330 nm紫外光照光下，量測電流-電壓從3.0×10-9 A 上升至5.1×10-8 A，在偏壓為0 V與330nm的光照下所量測到的照光電流/暗電流差距約為55倍。在非晶氧化鋅銦錫光電晶體部分，在當閘極電壓為0 V，波長為330 nm紫外光照光下，量測電流-電壓從5.0×10-9 A 上升至6.1×10-7 A，在偏壓為0 V與330nm的光照下所量測到的照光電流/暗電流差距約為87倍。

In present study, it is the discussion of zinc oxide based thin film by sputtering. By adjusting the oxygen partial pressure or the sputtering power, the multifunctional thin films will be obtained. In the zinc indium tin oxide films prepared experiments, it is modulating the elements ratio or oxygen pressure to improve the ZnO thin films.
First, we applied ZnO thin film as the active layer to the fabrication of TFT with SiO2 gate dielectric. It was found that the field effect mobility was 3.84 cm2/Vs, the threshold voltage of 1.5 V, the subthreshold swing of 0.48 V/decade, the current ratio of 4.6x104. Furthermore, we found that the oxygen partial pressure and the sputtering power would change the optical and electrical properties. Then, we tuned the parameter from the better devices to improve the electrical characteristics. In a short, we doped the ITO into the ZnO thin film to enhance the characteristics of TFTs.
In the second part of the experiment, we applied amorphous zinc indium tin oxide film as the active layer to the fabrication of TFT with SiO2 gate dielectric. A-ZITO TFT showed the good performance, like the threshold voltage of 0.9 V, the current ratio of 4.7x105, the subthreshold swing 0.294 V/decade, the field-effect mobility of 5.32 cm2/Vs. In addition, the effect of element composition on the device performance of a-ZITO TFTs was investigated. Then, the exact origin of the improvement of electrical characteristics, and optimize the effects of the In, Zn, and Sn fractions in ZITO thin films, in order to improve the performance of a device.
Finally, we did some research about the reliability of the TFTs. After every two weeks, we used the ZnO based TFTs to do some measurements. We found that degeneration of ZITO TFT is more serious. For ZnO TFT and ZITO TFT： the threshold voltage shift of 1.3V, 0.6V; current ratio decrease about one order, three order; subthreshold swing become worse than doubled, three times. In addition, devices would change the characteristics not only for time but also the illumination. We found degradation under the illumination. The ZnO TFTs at a gate voltage of 0 V and a wavelength of 330 nm UV light illumination, the measured current - voltage from 3.0 × 10-9 (A) up to 5.1 × 10-8 (A), the gate bias voltage is 0 V with 330nm light, which are measured according to the photocurrent / dark current of 55 times. In the a-ZITO TFTs, when the gate voltage of 0 V, a wavelength of 330 nm UV light illumination, the measured current - voltage from 5.0 × 10-9 (A) up to 6.1 × 10-7 (A), the bias is 0 V and 330nm light measured under illumination-current / dark current of 87 times.

chap1
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[1] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, ”Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science, vol. 300, pp. 1269, 2003.
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