本論文將絕熱地圖(Adiabaticity Map)運用於矽光子元件設計，透過計算瞬時超模態的絕熱參數，繪製多個元件參數下的絕熱關係，最後統合成絕熱地圖，以此優化絕熱路徑，得出最佳設計參數，提高耦合效率的同時，保有較大的頻寬，以及良好的製程容忍度與對準容忍度。
基於絕熱參數所繪製的絕熱地圖，透過避開地圖中的高耦合區域，可以相對自由地選擇耦合長度以及元件參數，本次設計的絕緣層覆矽之逆向梯形(裸)矽波導模態演化耦合器(Inverse taper waveguide mode evolution coupler)，由錐形光纖與矽波導的直接耦合，達到光纖與光子晶片的光學互連，矽波導為去除基板與埋入氧化層的裸波導，優化後的元件參數在相同耦合長度下，矽波導輸出端的基本TE模態提高約20 以上的耦合效率，1-dB頻寬從1.43 到1.71 約280 ，3-dB頻寬從1.3 到1.9 約為600 ，中心工作波長為1.55 ，有極大的工作頻寬，並同時保有一定的製程容忍度與三維對準容忍度。

This paper utilizes the adiabaticity map to optimize the design of silicon photonic devices. By calculating the instantaneous adiabaticity parameters and considering the adiabatic relationships for various device parameters, we construct the comprehensive adiabaticity map in order to optimize adiabatic path and determine the best design parameters. This research enhances coupling efficiency, also maintains a large bandwidth, and ensures good fabrication and alignment tolerances.
In order to avoid high-coupling regions, the adiabaticity map based on adiabaticity parameter allows flexible choices for coupling length and device parameters. The proposed design in this research is an inverse taper waveguide mode evolution coupler, directly connecting a tapered optical fiber with a silicon waveguide for optical interconnects. After optimization, the device achieves 20% higher coupling efficiency for the fundamental TE mode and 1-dB bandwidth is about 280 . The central operating wavelength is 1.55 , providing a significantly wide operating bandwidth, while also maintaining a certain level of fabrication tolerances and three-dimensional alignment tolerances.

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