本文研究5奈米電漿輔助原子層沈積機台之薄膜厚度均勻度改善，將現行晶圓廠，在晶圓的區域範圍及整體薄膜厚度落差範圍均達到所需要的規格，針對不同因素的影響進行實驗及分析，並利用實際數據進行改善。實驗中針對機台氣體通道Manifold 與 Gas transfer tube 間的 Alignment 位置、Shower Plate 鎖螺絲的磅數手法對於 O-ring 的平整度，機台維修手法 AGS 的精準度及ATS對均勻度的影響，並利用數據模擬證明研究方向的正確性。實驗結果發現AGS的提升及安裝螺絲手法為主要影響因素，以80nm膜厚的晶圓而言整體range將可減少約7 Å，而氣體通道的alignment 為次要因素整體range將可減少約3 Å。

In this thesis, improving the film thickness uniformity of a 5 nm process by plasma enhanced atomic layer deposition (PEALD) to meet the specifications was carried out in a fab. The impact of different factors was studied, including the alignment of gas flow channels of manifold and gas transfer tube, shower plate screw torque on O-ring uniformity, optimization of AGS maintenance, and ATS by using both experiments and some numerical simulation. The experimental results show that AGS, the method of screw fixation, and gas channel alignment are the main factors. The overall range of 80nm film thickness wafer can be reduced by around 7Å; the alignment of gas channels can reduce the non-uniformity by around 3 Å. By proper actions of the alignment, AGS, and O-ring torque force and size, both U% and range specifications can be met for the 5 nm process node.

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