本研究主要探討以RF磁控濺鍍法在塑膠基板上鍍覆透明導電膜( ITO )，探討其結構與光電特性之關係。目前在顯示器應用上所用的基板主要以玻璃為主，為求輕量化、薄型化、甚至可撓曲，採用塑膠基板則成為一種未來的趨勢與選擇。
塑膠本質上與玻璃具有很大的差異，如在耐熱及熱膨脹係數上無法與玻璃相比，塑膠基板與ITO的熱膨脹係數差異會造成薄膜熱應力的問題，使得在濺鍍時會造成ITO薄膜破裂；而耐熱性的不足會造成導電性不佳。為解決薄膜熱應力的問題，本研究利用間歇式薄膜成長(intermittent growth)的方法，增加薄膜濺鍍時的時間，使得濺鍍時粒子撞擊基材表面產生的瞬間高溫有足夠的時間散熱，如此，可使塑膠基材能於較高的工作瓦數下，被覆上一層ITO薄膜，而不致於有薄膜破裂或基材翹曲的情形產生。
研究結果顯示，在一般濺鍍情況下，RF濺鍍功率大於100W，濺鍍時間超過5min，ITO薄膜即會因熱應力之緣故而產生破裂的現象，而塑膠基板也因溫度過高呈現翹曲以及軟化等現象。但採用間歇式的薄膜成長方式後，沈積於塑膠基板上的ITO原子有足夠的時間遷移成長，同時塑膠基板也可散熱。因此在較高瓦數及長時間的濺鍍條件下，塑膠基板不會因為溫度與功率的問題造成變形，薄膜也不會破裂。而經X-ray繞射分析結果顯示，在此製程條件下濺鍍出之薄膜為微晶相，在後續蝕刻處理時效果較結晶薄膜快。而經過四點探針量測電性後顯示，此製程條件之最佳電阻率約為5.75 x 10-4 Ω‧cm。試片可見光穿透率皆在80 %以上。

Transparent and conductive ITO thin film were prepared on plastic substrate by RF magnetron sputtering. The relationship between structure characteristics and optical as well as electrical properties was investigated in this study. For producing the LCD (Liquid Crystal Displays), the transparent conductive films are generally deposited on the glass. Because plastic substrates have the advantages of low cost, light-weighted, and rugged characteristics, it was considered as the materials of the next period for the substrate of LCD.
While in production process and in practical use, the problems of heat resistance ,and thermal expansion must be overcome.
We have introduced a new technology into the sputtering of indium-tin oxide (ITO) films. The techniques process are called “ intermittent thin film growth ”by us .During deposition process ,we make the substrate rotated and therefore increasing thin film cooling time .By this way , we were deposited ITO thin film on the plastic substrate in high RF power deposition because high thin film stresses are induced and resulting in peeling of a film. Whatever the intermittent thin film growth can avoid the deformation or the curl of the plastic substrates.
From the experimental results, it is found that the ITO thin film and plastic substrate will be damaged by the high substrate temperature and high residual stress when deposition times over 5 min in continuous deposition. But use the “ thin film intermittent growth ”, it is found that the ITO thin film can deposited on plastic substrate successfully. The XRD diffraction shows that the ITO thin film have a micro-grain structure and it can etch faster than polycrystalline thin film in etching process.
In this study, we could get the lowest resistivity of 5.75 x 10-4Ω‧cm and over 80% of the average transmittance in the visible region at the condition of intermittent deposition.

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