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研究生：	陳鳳瑜 Chen, Fung-Yu
論文名稱：	氧化鉻添加鍶鋇鈮陶瓷的介電性質及燒結行為 Dielectric Properties and Sintering Behavior of Chromium-Doped Strontium Barium Niobate Ceramics
指導教授：	方滄澤 Fang, Tsang-Tse
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學及工程學系 Department of Materials Science and Engineering
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	129
中文關鍵詞：	鍶鋇鈮
外文關鍵詞：	SBN, random field
相關次數：	點閱：49 下載：1
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　　鍶鋇鈮陶瓷是一種很好的透光材料，已可應用於工業上。雖然鍶鋇鈮單晶的性質已廣泛被研究，因受形狀大小、機械強度及價格的限制，並無法實際應用。因此開發鍶鋇鈮多晶陶瓷，仍必然趨勢。

　　在鍶鋇鈮陶瓷中添加Cr2O3，探討其燒結行為及介電性質。由於Cr離子取代部分Nb離子占據在B位置，產生電荷補償機制，隨添加量上升，晶格常數中，a軸拉長，c軸縮短。燒結行為上，隨Cr2O3添加量至 2mole %，由於產生的電荷補償造成Nb-O鍵能量下降，緻密化速率上升。由SEM佐證發現有添加Cr2O3時，其晶粒明顯較未添加大很多。在介電性質，利用電滯曲線( the Hysteresis loop )求出殘留極化量( the remanent polarization )、弛緩時間( the relaxation time )及Random field與添加量的關係，得知隨添加量上升，殘留極化量上升，由於電荷擾動( the charge fluctuation )程度增加，因此random field增加。

　　Strontium barium niobate ( SBN ) ceramic is a good electro-optic material and has been widely used. Though the properties of the single crystal, SBN, has been intensively studied, there are still some restrictions in their applications because of the small size, low mechanical strength, and high cost. Hence, it has been intrigued to strontium barium niobate ceramic.

　　Strontium barium niobate doped Cr2O3 is investigated into the sintering behavior and the dielectric properties. It produces the charge compensation due to the Cr ions which replace a part of Nb ions in the B site. Due to the increase of the quantity of the additive, Cr2O3, the a axis is increased, but the c axis is decreased. In the sintering behavior, the additive up to 2 mole%, the densification rate is increased. It is because of the charge compensation. In the dielectric properties, the remanent polarization, the relaxation time, and the Random field are studied by the Hysteresis loop. When the additive is increased, the remanent polarization is promoted. Due to the increase of the degree of the charge fluctuation, the Random field is increased.

中文摘要.....................................................................Ⅰ
英文摘要...........................................................................Ⅱ
目錄............................................................................i
圖目錄.......................................................................iv
表目錄.......................................................................xi

第一章	緒論.................................................................1
1-1	前言.................................................................1
1-2	本研究之重點及目的...................................................3

第二章	文獻回顧與理論基礎...................................................4
2-1 陶瓷製程與燒結和擴散性相變化..............................................4
2-1-1 粉末顆粒大小對於生胚結構的影響..........................................4
2-1-2 燒結............................................................................8
2-1-3 擴散性相變化(Diffuse phase transition, DPT)定義........................14
2-1-4 擴散性相變化生成機構...................................................14
2-2 SBN結構..................................................................17
2-3 SBN性質..................................................................23
2-3-1 SBN介電性質............................................................23
2-3-2光學性質...........................................................................31
2-4 SBN的陶瓷製程...........................................................................34
2-4-1 SBN粉末合成機構........................................................34
2-4-2 SN與BN合成SBN的反應機構模型............................................34
2-4-3 SBN單相燒結之顯微結構演進與控制........................................35
2-5 Random Fields (RFs)......................................................41
2-5-1 Relaxor......................................................................41
2-5-2 FC和ZFC................................................................43
2-5-3純SBN的RFs..............................................................43
2-5-4有添加物SBN的RFs........................................................45
2-5-5在失序鐵電(disordered ferroelectrics)中的Random electric fields.........54

第三章 實驗方法及步驟........................................................58
3-1實驗藥品..................................................................58
3-2樣品準備..................................................................58
3-3 性質的量測...............................................................59
3-3-1 X光繞射分析............................................................59
3-3-2 密度量測...............................................................60
3-3-3 介電常數對溫度關係的量測...............................................61
3-3-4 P-E曲線量測............................................................61
3-3-5 SEM顯微結構觀察........................................................62
3-4 緻密化速率的計算.........................................................62

第四章 結果與討論............................................................65
4-1 電荷補償缺陷(charge-compensated defect)..................................65
4-2 單相燒結行為和顯微結構...................................................68
4-3 介電性質.................................................................85
4-4 relaxor行為..............................................................89
4-4-1 random field model.....................................................89
4-4-2 Cr2O3添加之SBN的random field..........................................101

第五章 結論.................................................................106

第六章 參考文獻.............................................................107
                                    

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