本論文使用探針掃描微影術(Scanning probe Lithography)的方式，在SOI(110)基板上製作週期小於0.5 μm的光柵(Grating)結構。主要可分為三個部份，第一部分為探針掃瞄微影術氧化研究，探討交直流電壓、交流電壓頻率以及探針掃描速率對氧化層的影響。在第二部份中，將使用TMAH 25 % w.t.溶液進行非等向性濕蝕刻(Anisotropic Wet Etching)，並在不同蝕刻溫度與時間下做分析。在第三部分，使用直流電壓進行氧化，分別改變探針與試片表面間距以及控制環境溼度下進行光柵結構製作。經過實驗後，使用直流電壓10 V、探針掃描速率1 μm/s和Z(T:B)為-0.9 V及週遭環境溼度控制在39 %下進行微影氧化，並且在60秒60 °C之TMAH蝕刻後，可以得到結構高度194.8 nm與結構寬度195 nm，高寬比為1：1，週期為0.5 μm的光柵結構，最後將在波導管上完成週期為0.5 μm和0.3 μm的光柵結構製作。

The purpose of the study is to fabricate grating period less than 0.5 μm using Scanning Probe lithography. The thesis is organized with three parts. First, the efficiencies of lithography oxidation were measured and discussed using various DC voltages, AC frequencies and oxidation scanning rates. Second, TMAH 25 % wt. solution was employed in anisotropic wet etching, and the etched grating shapes and etching rates were evaludated under different temperatures. Third, with low humidity, the oxidation width were further decreased by modifying the distance from the AFM nano-probe to the wafer surface. By experiment, the environment parameters of optimization were obtained as: DC voltage 10 V, scanning probe rate 1 μm/s, Z(T:B) at -0.9 V and environment humidity 39 %. Grating structure of the period of 0.5 μm, structure depth of 194.8nm and structure width of 195 nm was achieved by 60-second wet etching in TMAH at 60℃. These parameters of optimization could provide good references for further research in patterning grating structure on the top surface of a SOI waveguide.

[1]G. Bennig, C. F. Quate, CH. Geber, "Atomic Force Microscope", Phys. Rev. Lett. , Vol. 56, No. 9, p930, 1986
[2]J. A. Dagata, J. Schneir, H. H. Hataty, C. J. Evans, M. T. Postek and J. Bennett "Modification of hydrogen-passicated silicon by a scanning tunneling microscope oerating in air", Appl. Phys. Lett. Vol. 56, pp. 2001-2003,1990
[3]E. S. Snow, P. M. Campbell, and P. J. McMarr, "Fabrication of nanostructures with a scanning tunneling microscope", Appl. Phys. Lett. , Vol. 63, No. 6, pp. 749-751, 1993
[4]E. S. Snow, W. H. Juan, S. W. Pang and P. M. Campbell, "Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclontron resonance source", Appl. Phys. Lett., Vol. 66, pp. 1729-1731, 1995
[5]Phaedon Avouris , a Tobias Hertel, and Richard Martel ,"Atomic force microscope tip-induced local oxidation of silicon: kinetics ,mechanism, and nanofabrication", Appl. Phys. Lett. Vol. 71, No. 2, pp. 285-287, 1997
[6]J. T. Sheu, C. H. Wu, K. S. You, and K. M. Chang, "Linerity of Scanning Probe Lithography on (110) Silicon Wafer", IEEE-NANO 2001, 2001
[7]F.S.-S. Chien, W.-F. Hsieh, S. Gwo, J. Jun, R. M. Silver, A. E. Vladar, and J. A. Dagata, "Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etching", J. Vac. Sci. Technol. B Vol. 23, pp. 66-71, 2005
[8]Sunwoo Lee, Haiwon Lee, Byung-jae Park and Geun Young Yeom, "Selective growth of nanometre scale structures with high resolution using thermal energy in AFM lithography", Nanotechnology, Vol.16, pp. 3137-3141, 2005
[9]N. Cabrera, N. F. Mott, "Theory of the oxidation of metals", Rep. Prog. Phys. vol. 12, pp. 163, 1949
[10]Phaedon Avouris, Tobias Hertel, and Richard Martel, "Atomic force microscope tip-induced local oxidation of silicon; kinetics, mechanism, and nanofabrication", Appl. Phys. Lett. 71, p. 285, 1997
[11]Wolf S and Tauber R N 2000 Silicon Processing for the VLSI Era. 2nd edn, vol. 1 Process of Technology (California: Lattice Press) p. 151
[12]Sunwoo Lee, Haiwon Lee, Byung-jae Park and Geun Young Yeom, "Selective groeth of nanometer scale structures with high resolution using thermal energy in AFM lithography", Nanotechnology, Vol.16, pp. 3137-3141, 2005
[13]SukjongBae, CheolsuHan, Moo-SubKim, Chung Choo Chung and Haiwon Lee, "Atomic force microscope anodization lithography using pulsed bias voltage synchronized with resonance frequency of cantilever", Nanotechnology, Vol. 16, pp. 2082-2085, 2005
[14]Cheol Hong Park, Sukjong Baeb, Haiwon Lee, "Nano-oxidation of Si using ac modulation in atomic force microscope lithography", Physicochem. Eng. Aspects Vol.284–285, pp. 552-555, 2006
[15]邱華恭，"矽晶片波導元件研究"，國立中央大學,光電科學研究所碩士論文，2005
[16]B. Jalali, P. D. Trinh, S. Yegnanarayanan, F. Coppinger, "Guided-wave optics in silicon on insulator technology ", IEE Proc. Optoelectron., Vol. 143, No. 5, 1996
[17]B. Jalali, P. D. Trinh, S. Yegnanarayanan, "Silicon-on-Insulator Phased-Array Wavelength Multi/Demultiplexer with Extremely Low-Polarization Sensitivity", IEEE Photonics Technol. Lett., Vol. 9, No.7, 1997
[18]G. Bennig, H. Rohrer, CH. Gerber, E. Weibel, "Surface Studies by Scanning Tunneling Microscopy", Vol. 49, No. 1, p. 57 , 1982
[19]莊達人，"VLSI製造技術"，高立，1996
[20]陳柏穎，" 矽晶圓非等向性濕式蝕刻特性研究"，國立中山大學機械與機電工程研究所碩士論文，2003
[21]J. M. Crishal and A. L. Harrington, "A Selective Etch for Elemental Silicon", J. Electrochem SOC, Vol. 111, p.202, 1962
[22]P. J. Holmes, "The Eletrochemistry of Semiconductors", Academic Press, pp.329 1962
[23]E. Bassous, "Fabricaton of novel three-dimemsional microstructiones by the anisotropic etching of (100) and (110) silicon", IEEE Trans. Electron Devices, ED-25, p. 1178, 1978.
[24]Michael Quirk, Julian Serda, Tsang-hai Book Publishing Co. "Semiconductor Manufacuring Technology "
[25]Donald A. Neaamen, "Semiconductor physics and devices", third edition,
[26]K. E. Bean, "Anisotropic etching of silicon", IEEE Trans. Electron Devices, ED-25, pp. 1185-1193, 1978
[27]Hiroshi Nishihara, Masamitsu Haruna , and Toshiaki Suhara, “Optical integrated circuits” McGraw-Hill, 1987
[28]Andrew Sappey and Pei Huang, " Free-space diffraction gratings allow denser channel spacing", WDM Solutions, pp.39-41, 2001