氧化鋅是一種常見且被廣泛應用的半導體材料，許多應用建立於其壓電性質、光學性質與導電性質方面；近年來奈米科技深受重視，許多製作奈米結構的製程技術也被研究出來，但是對於氧化鋅而言，基乎全部的奈米結構製作都是由化學氣相沉積所達成，缺乏一種簡單的物理氣相沉積制程來製作氧化鋅的奈米結構。本研究發現一種新的製作氧化鋅奈米結構的製程，且製程中僅使用射頻磁控濺鍍；在濺鍍過程中，使用氫氣與氬氣的混何物，能夠明顯觀察到氫氣的還原反應，而氧化鋅緩衝層與氧化鋅鎂成核穩定層被使用於奈米結構成長的前期，最後，高品質的氧化鋅奈米結構形成，其性質與形成機制在本研究中被更深入的討論。

　　ZnO is a wide band-gap semiconductor(~3.4ev) and has many application based on its piezoelectric, optical, electric properties. In recent years, nano-technology has been attached and many processes were reported for producing ZnO nano-structure. There are many reports focus on manufacturing ZnO nano-structure with chemical vapor deposition(CVD) and metal-organic chemical vapor deposition(MOCVD). However, the method for physical vapor deposition(PVD) is still deficient. We report a new method for fabricating ZnO nano structure only use RF magnetron sputter. When sputtering, hydrogen and argon mixture was used and the reduction behavior was observed clearly. The ZnO buffer layer and ZnMgO nucleation stabilization layer were deposited, finally, high quality ZnO nano-rod was formed on these two films and properties of ZnO nano-rod were measured and discussed.

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