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研究生: 鄭敬亞
Cheng, Ching-Ya
論文名稱: 具氮化矽介電層之石墨烯
Graphene on silicon nitride dielectrics
指導教授: 陳則銘
Chen, Tse-Ming
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2015
畢業學年度: 103
語文別: 英文
論文頁數: 45
中文關鍵詞: 石墨烯氮化矽
外文關鍵詞: graphene, silicon nitride
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  • 石墨烯是由一個元子厚度的六角形晶格所組成。自從西元二千零四年,石墨烯被發現之後,開始了對其廣泛的研究。傳統上,石墨烯是以二氧化矽作為其基板,不過此基板無法提供好的品質;因此找到適合石墨烯的基板是一個重要的課題。在這個論文裡,使用的是六十奈米厚的四氮化二矽非晶的基板。在這裡,有製成的步驟,和當石墨烯放在此基板上能在光學顯微鏡下被看到的發現。

    Graphene is a one-atom-thick honeycomb lattice which is composed of carbon atoms, discovered by A. K. Giem and his team in 2004. However, graphene on standard silicon dioxide substrates are facing a bottleneck, due to the poor quality of this kind of devices. Fortunately, the quality has been greatly improved by putting graphene on boron nitride substrates, but the way of fabricating such a device is too hard for massive production. Here we provide another but easier way to achieve such high quality devices. The new way to improve the quality of graphene devices is to put graphene on silicon nitride substrates, which is predicted to enhance the quality greatly. So far, my work is using mechanical exfoliation method to place graphene on the new substrate “silicon nitride”, in which the thickness is 60 nm and try to make a graphene-based electrical devices. In this thesis, I present how to fabricate such a device and show that graphene is visible on 60-nm-thick silicon nitride substrates under observation of optical microscope.

    Contents Abstract i 摘要 ii Acknowledgement iii Contents iv 1 Introduction 1 2 Theoretical Background 4 2.1 Crystal Structure of Graphene......4 2.2 Bound Formation of Graphene......5 2.3 Tight Binding Method for Graphene......6 2.3.1 The Tight Binding Model......6 2.3.2 Tight Binding Model for Graphene......7 2.4 Dirac equation of graphene......13 2.5 The Quantum Hall effect......16 2.5.1 Classical approach......16 2.5.2 The Landau Level......18 2.5.3 The edge channel......19 2.5.4 Integer quantum Hall effect......20 2.5.5 Landau Levels of graphene......23 2.5.6 Unconventional integer quantum Hall effect in graphene......25 3 Fabrication Result and discussion 27 3.1 Introduction......27 3.2 The alignment mark......27 3.3 Searching for graphene......28 3.4 Ohmic Contact......32 4 Conclusion and future work 36 Reference 37

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