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研究生: 許修銘
Hsu, Hsiu-Ming
論文名稱: 以熱氧化法製備氧化銅奈米線與鋅/氧化銅奈米線異質結構及其特性研究
Investigation on the Fabrication and Properties of CuO Nanowires and Zn/CuO Nanowire Heterostructures with Thermal Oxidation
指導教授: 呂國彰
Lu, Kuo-Chang
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 84
中文關鍵詞: 氧化銅熱氧化法奈米線鋅/氧化銅異質結構
外文關鍵詞: copper oxide, thermal oxidation, nanowires, Zn/CuO heterostructures
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  • 本論文之研究方向是以熱氧化法來成長CuO奈米線並探討其生長機制以及各種成長參數對形貌之影響,另外藉由Zn金屬蒸氣進行改質,產生Zn/CuO奈米線異質結構。最後進行物理特性的量測,並對改質前後的奈米結構進行比較。
    成長參數方面,本實驗分別變化退火溫度 (Annealing temperature)、持溫時間 (Oxidation time)、壓力 (Pressure) 以及基材預加工等部分來探討。發現在退火溫度350~750的區間內有奈米線之生成,過高與過低的溫度並不適合奈米線的成長,且溫度之高低與奈米線線徑之粗細存在正相關關係。在變化持溫時間的實驗中,最長進行了20小時的持溫,並且觀察到奈米線的長度隨著時間的延長有增長的情形,最長可以超過20μm,但時間的延長同時也降低了奈米線的數量密度。在低壓的實驗中,並沒有奈米線的產出,這是由於爐管內部氧氣濃度不足的緣故。最後比較基材預加工情形的實驗,採用了三種不同厚度的銅基板為實驗原料,基材的預加工使得銅片具有不同的厚度,也產生不同的微結構,此微結構的將影響退火後產出的奈米線形貌。
    以熱氧化法成長氧化銅奈米線主要是藉由銅基板氧化後,於其上成長出的氧化亞銅與氧化銅介面處所累積的應力所誘發的。此應力藉由成長出奈米線的方式得到釋放,並且來自基板的銅原子,以晶界為路徑進行擴散,增長奈米線的長度。
    改質的實驗,採用將已成長奈米線之基材再次放入爐管之內,並以Ar攜帶Zn金屬蒸氣的方式進行,成長出了Zn/CuO的奈米異質結構。最後量測了奈米線的物理特性,包含:光致螢光 (PL)、場發射性質 (Field emission)、磁性以及電傳導性質,並且進行了改質前後奈米線的特性比較。

    In this thesis, cupric oxide nanowires were successfully grown through the thermal oxidation of copper substrates in a three-zone horizontal tube furnace over temperatures ranging from 300 to 800℃. Processing parameters, such as annealing temperature, oxidation time, pressure and prefabrication of the substrates were varied and investigated in terms of their influence on the morphology, aspect ratio and number density of the nanowires. Scanning electron microscopy studies showed that these nanowires controllably ranged in diameter from 40 to 400nm with lengths of up to 20μm and the varying density was a function of the growth temperature and reaction time. High resolution transmission electron microscopy and x-ray diffraction studies were conducted to further identify the chemical composition, crystal structure and growth direction of the nanowires. Additionally, the growth mechanism was also proposed. In the modifying experiment, “2-step annealing” was carried out to modify the chemical composition of the nanowires. Zn/CuO nanowire heterostructures were synthesized successfully through the reaction between Zn and the nanowires. Physical properties including photoluminescence, magnetic property, field emission and electrical property were measured and studied. The results demonstrated that copper oxide nanowires are attractive choices for future engineering applications and Zn/CuO nanowire heterostructures possess interesting property changes.

    摘要 I Extended Abstract II 誌謝 XI 第一章 前言 1 第二章 理論基礎與文獻回顧 2 2-1奈米科技簡介 2 2-1-1化學反應活性 3 2-1-2電性 3 2-1-3磁性 3 2-1-4光學性質 3 2-2奈米材料的化學製備方法 4 2-2-1氣液固成長機制 (Vapor-Liquid-Solid, VLS) 4 2-2-2水熱法 (Hydrothermal Process) 5 2-2-3化學氣相沉積法 (Chemical Vapor Deposition, CVD) 5 2-3氧化銅奈米結構 6 2-3-1 CuO (氧化銅) 6 2-3-2 Cu2O (氧化亞銅) 7 2-3-3電子能帶 (Electronic band structure) 7 2-3-4電性 7 第三章 實驗方法與步驟 9 3-1實驗流程 9 3-2實驗步驟 9 3-2-1成長氧化銅奈米線 9 3-2-2改質實驗 10 3-2-3性質量測 11 3-3氧化銅奈米線之分析 11 3-3-1 X光繞射分析儀 (Thin-Film X-Ray Diffractometer, XRD) 11 3-3-2掃描式電子顯微鏡 (Scanning Electron Microscopy, SEM) 12 3-3-3穿透式電子顯微鏡 (Transmission Electron Microscopy, TEM) 14 3-3-4能量散佈光譜儀 (Energy Dispersive Spectroscopy, EDS) 15 3-3-5 X射線光電子能譜儀 (X-ray Photoelectron Spectroscopy, XPS) 15 3-3-6拉曼光譜 (Raman Spectroscopy) 16 3-3-7光致螢光光譜分析 (Photoluminescence, PL) 16 3-3-8超導量子干涉儀 (SQUID-VSM) 17 3-3-9場發射量測系統 18 3-3-10多探針奈米電性量測系統 19 第四章 結果與討論 20 4-1 成長參數對奈米線形貌的影響 20 4-1-1退火溫度的影響 20 4-1-2持溫時間對奈米線形貌的影響 34 4-1-3壓力的影響 38 4-1-4基板預加工的影響 41 4-1-5奈米線成長機制 50 4-2 改質實驗 59 4-2-1二次加熱法 (2-Step Annealing) 59 4-2-2鋅/氧化銅奈米線異質結構之結構與化學組成分析 59 4-3 性質量測 72 4-3-1光致螢光性質量測 72 4-3-2磁性量測 74 4-3-3場發射性質量測 76 4-3-4電傳導性質量測 78 第五章 結論 81 參考文獻 82

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